powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 six igbtmod? + brake nx-series module 100 amperes/600 volts CM100RX-12A 1 rev. 3/09 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of six igbt transistors in a three phase bridge configuration and a seventh igbt with free- wheel diode for dynamic braking. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM100RX-12A is a 600v (v ces ), 100 ampere six-igbtmod? + brake power module. type current rating v ces amperes volts (x 50) cm 100 12 outline drawing and circuit diagram p(35) b(4) g w n(14) g w p(18) e w p(17) g v n(22) g v p(26) e v p(25) g u n(30) e w n(13) e v n(21) e u n(29) g u p(34) e u p(33) u(1) v(2) w(3) gb(6) n(36) th 1 (11) th 2 (10) ntc eb(5) a ah az ba q r s t u v h x y z z n m l k b an aj ap am am am ak am am aj al ax ay ak al al al al al al z r q q r d e f g h j p p w j p aa(4 places) detail "b" *all pin dimensions within a tolerance of 0.5 ab (6 places) detail "a" 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 detail "b" c r at au aq av aw as ar al al ad ae af ag bb bc bd be ac detail "a" dimensions inches millimeters a 5.39 136.9 b 3.03 77.1 c 0.67+0.04/-0.02 17.0+1.0/-0.5 d 4.79 121.7 e 4.330.02 110.00.5 f 3.89 99.0 g 3.72 94.5 h 0.83 21.14 j 0.37 6.5 k 2.44 62.0 l 2.26 57.5 m 1.970.02 50.00.5 n 1.53 39.0 p 0.24 6.0 q 0.48 12.0 r 0.67 17.0 s 1.53 39.0 t 0.87 22.0 u 0.55 14.0 v 0.54 13.64 w 0.33 8.5 x 0.53 13.5 y 0.81 20.71 z 0.9 22.86 aa 0.22 dia. 5.5 dia. ab m5 m5 ac 0.06 1.5 dimensions inches millimeters ad 0.51 13.0 ae 0.12 3.0 af 0.21 5.4 ag 0.49 12.5 ah 0.81 20.5 aj 0.30 7.75 ak 0.28 7.25 al 0.15 3.81 am 0.45 11.44 an 0.14 3.5 ap 0.16 4.06 aq 0.78 20.05 ar 0.03 0.8 as 0.27 7.0 at 0.16 4.2 au 0.61 15.48 av 0.60 15.24 aw 0.46 11.66 ax 0.04 1.15 ay 0.02 0.65 az 0.29 7.4 ba 0.05 6.2 bb 0.49 12.5 bc 0.17 dia. 4.3 dia. bd 0.10 dia. 2.5 dia. be 0.08 dia. 2.1dia.
CM100RX-12A six igbtmod? + brake nx-series module 100 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 2 rev. 3/09 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol CM100RX-12A units power device junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c mounting torque, m5 mounting screws 31 in-lb mounting torque, m5 main terminal screws 31 in-lb module weight (typical) 330 grams baseplate flatness, on centerline x, y (see below) 0 ~ +100 m isolation voltage, ac 1 minute, 60hz sinusoidal v iso 2500 volts inverter sector collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 75c) *1 i c 100 amperes peak collector current (pulse) *3 i cm 200 amperes emitter current (t c = 25c) *1 i e *2 100 amperes peak emitter current *3 i em *2 200 amperes maximum collector dissipation (t c = 25c) *1*4 p c 400 watts brake sector collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 97c) *1 i c 50 amperes peak collector current (pulse) *3 i cm 100 amperes maximum collector dissipation (t c = 25c) *1*4 p c 280 watts repetitive peak reverse voltage (clamp diode part) v rrm *2 600 volts forward current (t c = 25c) *1 i f *2 50 amperes forward current (pulse) *3 i fm *2 100 amperes *1 case temperature (t c ) and heatsink temperature (t f ) are defined on the surface of the baseplate and heatsink at just under the chip. *2 i e , i em , v ec , t rr and q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). i f , i fm , i rrm , v fm and v rrm represent ratings and characteristics of the clamp diode. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond t j(max) rating. 34 0 0 0 0 33 32 31 30 29 28 27 26 25 24 23 22 dimensions in mm (tolerance: 1mm) 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 igbt fwdi ntc thermistor chip location (top view) 24.8 22.2 31.7 41.2 50.7 78.8 88.4 99.5 41.2 29.4 u p v p w p w n v n u n br 22.2 31.7 41.2 50.7 79.4 88.4 96.8 21.3 32.2 36.8 u p v p w p w n br v n u n 30.4 th chip location (top view) baseplate flatness measurement point heatsink side ? : concave + : convex ? : concave x y + : convex heatsink side
CM100RX-12A six igbtmod? + brake nx-series module 100 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 3 rev. 3/09 electrical and mechanical characteristics, t j = 25c unless otherwise specifed inverter sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 5 6 7 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c *5 1.7 2.1 volts i c = 100a, v ge = 15v, t j = 125c *5 1.9 volts i c = 100a, v ge = 15v, chip 1.6 volts input capacitance c ies 13.3 nf output capacitance c oes v ce = 10v, v ge = 0v 1.4 nf reverse transfer capacitance c res 0.45 nf total gate charge q g v cc = 300v, i c = 100a, v ge = 15v 270 nc inductive turn-on delay time t d(on) 100 ns load turn-on rise time t r v cc = 300v, i c = 100a, 100 ns switch turn-off delay time t d(off) v ge = 15v, 300 ns time turn-off fall time t f r g = 6.2 , i e = 100a, 600 ns reverse recovery time t rr *2 inductive load switching operation 200 ns reverse recovery charge qrr *2 4.8 c emitter-collector voltage v ec *2 i e = 100a, v ge = 0v, t j = 25c *5 2.0 2.8 volts i e = 100a, v ge = 0v, t j = 125c *5 1.95 volts i e = 100a, v ge = 0v, chip 1.9 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case** r th(j-c) q per igbt *1 0.31 c/w thermal resistance, junction to case** r th(j-c) d per fwdi *1 0.59 c/w contact thermal resistance** r th(j-f) case to heatsink (per 1 module) 0.015 c/w thermal grease applied *1*7 internal gate resistance r gint t c = 25c 0 external gate resistance r g 6 62 **thermal resistance values are per 1 element. *1 case temperature (t c ) and heatsink temperature (t f ) are defined on the surface of the baseplate and heatsink at just under the chip. *2 i e , i em , v ec , t rr and q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). i f , i fm , i rrm , v fm and v rrm represent ratings and characteristics of the clamp diode. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)].
CM100RX-12A six igbtmod? + brake nx-series module 100 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 4 rev. 3/09 electrical and mechanical characteristics, t j = 25c unless otherwise specifed brake sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 5ma 5 6 7 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v, t j = 25c *5 1.7 2.1 volts i c = 50a, v ge = 15v, t j = 125c *5 1.9 volts i c = 50a, v ge = 15v, chip 1.6 volts input capacitance c ies 9.3 nf output capacitance c oes v ce = 10v, v ge = 0v 1.0 nf reverse transfer capacitance c res 0.3 nf total gate charge q g v cc = 300v, i c = 50a, v ge = 15v 200 nc repetitive reverse current i rrm *2 v r = v rrm 1.0 ma forward voltage drop v fm *2 i f = 50a, t j = 25c *5 2.0 2.8 volts i f = 50a, t j = 125c *5 1.95 volts i f = 50a, chip 1.9 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case** r th(j-c) q per igbt *1 0.44 c/w thermal resistance, junction to case** r th(j-c) d per fwdi *1 0.85 c/w contact thermal resistance** r th(j-f) case to heatsink (per 1 module) 0.015 c/w thermal grease applied *1*7 internal gate resistance r gint t c = 25c 0 external gate resistance r g 13 125 ntc thermistor sector , t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units zero power resistance r t c = 25c *1 4.85 5.00 5.15 k deviation of resistance ? r/r t c = 100c, r 100 = 493 *1 C7.3 +7.8 % b constant b (25/50) b = (inr 1 C inr 2 ) / (1/t 1 C 1/t 2 ) *6 3375 k power dissipation p 25 t c = 25c *1 10 mw **thermal resistance values are per 1 element. *1 case temperature (t c ) and heatsink temperature (t f ) are defined on the surface of the baseplate and heatsink at just under the chip. *2 i e , i em , v ec , t rr and q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). i f , i fm , i rrm , v fm and v rrm represent ratings and characteristics of the clamp diode. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)].
CM100RX-12A six igbtmod? + brake nx-series module 100 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 5 rev. 3/09 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 2 10 1 10 0 10 -2 10 -1 10 1 0 1 3 2 4 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 200a i c = 100a i c = 40a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 8 t j = 25 c 200 100 50 150 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 200 100 50 150 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 6.2? t j = 125c inductive load t f 10 3 gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time, (ns) switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v i c = 100a t j = 125c inductive load t f 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 100 200 300 400 v cc = 300v v cc = 200v i c = 100a emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 300v v ge = 15v r g = 6.2? t j = 25c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
CM100RX-12A six igbtmod? + brake nx-series module 100 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 6 rev. 3/09 time, (s) transient thermal impedance characteristics (inverter part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.31c/w (igbt) r th(j-c) = 0.59c/w (fwdi) normalized transient thermal impedance, z th(j-c') time, (s) transient thermal impedance characteristics (brake part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.44c/w (igbt) r th(j-c) = 0.85c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 2 10 0 10 1 10 1 10 -1 10 0 v cc = 300v v ge = 15v i c = 100a t j = 125c inductive load 10 2 switching loss vs. gate resistance (inverter part - typical) e on e off gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 -1 10 0 v cc = 300v v ge = 15v i e = 100a t j = 125c inductive load 10 2 reverse recovery switching loss vs. gate resistance (inverter part - typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 300v v ge = 15v r g = 6.2? t j = 125c inductive load 10 3 reverse recovery switching loss vs. emitter current (inverter part - typical) e rr e rr v cc = 300v v ge = 15v r g = 6.2? t j = 125c inductive load e on e off collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 10 3 switching loss vs. collector current (inverter part - typical) 0 1 3 2 4 10 0 10 1 forward voltage, v f , (volts) free-wheel diode forward characteristics (brake part - typical) 10 2 forward current, i f , (amperes) collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (brake part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 100 40 20 80 60 v ge = 15v t j = 25c t j = 125c t j = 25c t j = 125c
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